Gate dielectrics improve gallium nitride devices
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Access through your institution Buy or subscribe _IEEE J. Electron Dev. Soc_. 8, 15–19 (2019) The researchers — who are based at Nanjing University — used the bilayer Y2O3/HfO2 dielectric
stacks to fabricate GaN-based metal–insulator–semiconductor HEMTs on silicon. To confirm the quality of the interface between the dielectric and GaN, measurements were carried out that
showed a low interface density of states (1012 cm–2 eV–1). The transistors exhibited a low subthreshold swing of 70 mV dec−1 because of the small effective oxide thickness (2 nm) of the
oxide layers. Compared with transistors based on other gate dielectric materials, the bilayer dielectric stacks result in a lower gate leakage of 10−12 A mm−1. This is a preview of
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https://www.nature.com/natelectron Christiana Varnava Authors * Christiana Varnava View author publications You can also search for this author inPubMed Google Scholar CORRESPONDING AUTHOR
Correspondence to Christiana Varnava. RIGHTS AND PERMISSIONS Reprints and permissions ABOUT THIS ARTICLE CITE THIS ARTICLE Varnava, C. Gate dielectrics improve gallium nitride devices. _Nat
Electron_ 3, 15 (2020). https://doi.org/10.1038/s41928-020-0371-6 Download citation * Published: 24 January 2020 * Issue Date: January 2020 * DOI: https://doi.org/10.1038/s41928-020-0371-6
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