Molecular design of near-ir dyes with different surface energy for selective loading to the heterojunction in blend films

Molecular design of near-ir dyes with different surface energy for selective loading to the heterojunction in blend films


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ABSTRACT We have synthesized three silicon phthalocyanine dyes with different hydrophobic substituents in order to control surface energy in the solid state, aiming at selective loading of


the dyes into blend films of poly(3-hexylthiophene) (P3HT) and polystyrene (PS). These three dyes are differently located at P3HT domains, at P3HT/PS interface and at PS domains,


respectively, which are fully consistent with the locations predicted by the wetting coefficient derived from the surface energy of each material. SIMILAR CONTENT BEING VIEWED BY OTHERS


MOLECULAR ORIENTATION-DEPENDENT ENERGETIC SHIFTS IN SOLUTION-PROCESSED NON-FULLERENE ACCEPTORS AND THEIR IMPACT ON ORGANIC PHOTOVOLTAIC PERFORMANCE Article Open access 04 April 2023


SYNTHESIS OF MODEL HETEROJUNCTION INTERFACES REVEALS MOLECULAR-CONFIGURATION-DEPENDENT PHOTOINDUCED CHARGE TRANSFER Article Open access 20 August 2024 BAND GAP ENGINEERING IN BLENDED ORGANIC


SEMICONDUCTOR FILMS BASED ON DIELECTRIC INTERACTIONS Article 10 June 2021 INTRODUCTION Self-assembling materials play a central role in various functional materials where functional


molecules are precisely arranged on a nanometer scale in a required configuration. For this purpose, various approaches such as the self-assembled monolayer method1,2, Langmuir–Blodgett


technique3,4, layer-by-layer assembly5,6 and microphase separated assembly7,8 have been widely applied. In dye-sensitized solar cells, for example, dye molecules are self-assembled to the


surface of TiO2 nanoparticules, which are covered with iodide/triiodide redox electrolyte solution9,10. This interfacial location of dye molecules is of particular importance for efficient


charge generation because both electron and hole should be transferred from dye to TiO2 and the redox couple, respectively. Owing to the elegant molecular alignment, dye-sensitized solar


cells based on dye-modified TiO2 exhibit highly efficient photovoltaic performance. Similarly, dye sensitization of polymer solar cells can easily extend the light-harvesting wavelength


range11,12,13,14,15,16,17,18,19,20,21,22,23,24. This approach is simple and versatile and therefore can be easily applied to multi-colored sensitization by incorporating different dye


molecules at the same time that have complementary absorption bands in the near-IR region13. As is the case with dye-sensitized solar cells, the key to success in dye sensitization of


polymer solar cells is selective dye loading to the heterojunction of donor/acceptor interface of blend films because both of hole and electron in dye excitons should be transferred to donor


and acceptor materials, respectively, at the same time to generate photocurrent efficiently. Previously, we found that almost all the dye molecules are spontaneously located at the


polymer/fullerene interface by analyzing transient absorption dynamics of ternary blend films14. Furthermore, we have shown that such spontaneous dye segregation into the interface is partly


due to crystallization of polymer, which would expel dye molecules to disordered interface and partly due to intermediate surface energy of dye molecules, which can minimize interfacial


energy when dye molecules are located at the heterojunction15. Inspired by these findings, we have motivated to design new dye molecules with appropriate surface energy so that they are


spontaneously segregated at specified domains in blend films. In this study, we synthesized three silicon phthalocyanine derivatives with different axial ligands in order to study the


relationship between the surface energy of dye molecules and the loading location in polymer blend films. Here, we selected silicon phthalocyanine bis(tri-_n_-hexylsilyl oxide) (SiPc6) as a


standard dye molecule because it serves as an efficient dye sensitizer in polymer/fullerene solar cells as reported previously12,13,14,15,19. To reduce the surface energy, we synthesized


silicon 2,9,16,23-tetra-_tert_-butyl-29_H_,31_H_-phthalocyanine bis(tri-_n_-hexylsilyl oxide) (BuSiPc6), which has four _tert_-butyl groups attached to the phthalocyanine core and two


tri-_n_-hexylsilyl oxide groups in the axial ligand. To increase the surface energy, we synthesized silicon phthalocyanine bis(tribenzylsilyl oxide) (SiPcBz), which has two tribenzylsilyl


oxide groups in the axial ligand. On the other hand, we employed two amorphous polymers to avoid the dye segregation induced by crystallization of polymer matrix as mentioned above. One


polymer is regiorandom poly(3-hexylthiophene) (RRa-P3HT) with a small surface energy25,26,27. The other polymer is polystyrene (PS) with a large surface energy15,27, which is comparable to


that of phenyl-C61-butyric acid methyl ester (PCBM) films15,28. In order to address the location of dye molecules, we measured AFM images of these blend films before and after the films were


immersed in pentane solution, which can extract dye molecules selectively. RESULTS SURFACE ENERGY First, we measured contact angles of ultrapure water dropped on several neat films at room


temperature in order to evaluate the surface energy of each material by using the Neumann's equation29. As summarized in Table 1, the surface energy of matrix materials is evaluated to


be 21 mJ m−2 (RRa-P3HT) and 26 mJ m−2 (PS), which are consistent with previous reports15,25,26,27. On the other hand, the surface energy of SiPc derivatives is evaluated to be 20.5 mJ m−2


(BuSiPc6), 23 mJ m−2 (SiPc6) and 27 mJ m−2 (SiPcBz). In other words, the relationship of the surface energy is as follows: BuSiPc6 < SiPc6 < SiPcBz. The lowest surface energy of


BuSiPc6 is because the phthalocyanine core ring is surrounded by many hydrophobic alkyl chains: four peripheral _tert_-butyl groups and two tri-_n_-hexylsilyl oxide axial ligands. The


highest surface energy of SiPcBz is due to two π-electron rich axial ligands of tribenzylsilyl oxide. As a result, the surface energy of BuSiPc6 is close to that of RRa-P3HT, the surface


energy of SiPc6 is in between RRa-P3HT and PS and the surface energy of SiPcBz is close to that of PS. SURFACE SEGREGATION Next, we measured the dependence of the surface energy of


polymer/dye binary blend films on the dye concentration in order to examine how the surface energy of each material impacts the surface segregation in blend films fabricated by spincoating.


For BuSiPc6 doped in RRa-P3HT or PS films, as shown in Figure 1a, the surface energy of both blend films not linearly but rapidly decreased from that of polymer neat films and approached


that of BuSiPc6 with increasing dye fraction. This is because BuSiPc6 has the lowest surface energy among them and hence can minimize the interface energy at the air/film interface. For


SiPc6 doped in RRa-P3HT or PS films, as shown in Figure 1b, the surface energy of RRa-P3HT/SiPc6 remained the same up to 50 wt% dye fraction while that of PS/SiPc6 rapidly decreased to that


of SiPc6 with increasing dye fraction. This is because SiPc6 has surface energy in between that of RRa-P3HT and PS. For SiPcBz doped in RRa-P3HT or PS films, as shown in Figure 1c, the


surface energy of both blend films remained the same up to 50 wt% dye fraction and finally increased to that of SiPcBz with increasing dye fraction. This is because SiPcBz has the highest


surface energy among them and hence is likely to avoid the air surface. In summary, all these results show that the film surface is likely to be spontaneously covered by a material with the


lowest surface energy to reduce the interfacial energy at the air/film interface. In other words, the surface energy has critical impact on the surface segregation in binary blend


films30,31,32. DYE LOCATION IN BLENDS We now move onto the segregation of dye molecules in RRa-P3HT/PS/dye ternary blend films. In order to directly observe the location of dye molecules, we


measured AFM images of RRa-P3HT/PS/dye ternary blend films before and after immersing the film in pentane solution, which selectively dissolve dye molecules. As shown in Figures 2d and 2e,


RRa-P3HT/PS/BuSiPc6 ternary blend films exhibit a similar sea-island structure before and after the pentane treatment. In contrast, there is a clear difference in the cross-sectional line


profile before and after the treatment. Here, the cross-section profile is a most typical one in which the height of each domain is roughly evaluated as a difference between the average


heights of various sea or island domains and the substrate height. As shown in Figures 2g and 2h, the average height of the island domain is reduced from ~170 to ~120 nm while the height of


the sea domains remains the same after the pentane treatment. Consequently, minor components in the island domains are exposed like a pinholder. A slight dip is observed at the sea/island


interface after the treatment. As shown in Figures 2a and 2b, dye absorption bands at around 350 and 680 nm completely disappear after the pentane treatment, indicating that all the dye


molecules are selectively extracted into pentane solution. After the film is immersed in cyclohexane for 3 min, which dissolves PS selectively as reported previously15,27,31, the sea domains


completely disappear while the island domains still remain as shown in Figures 2f and 2i. We therefore conclude that the majority of BuSiPc6 molecules are located in the RRa-P3HT island


domains in RRa-P3HT/PS/BuSiPc6 ternary blend films. As shown in Figures 3d and 3e, RRa-P3HT/PS/SiPc6 ternary blend films also exhibit a similar sea-island structure before and after the


pentane treatment. Interestingly, a ring structure is additionally observed at the sea/island interface. In the cross-sectional line profile, as shown in Figures 3g and 3h, the height of the


ring portion is higher than that of the other domains before the treatment but sharply depressed after the treatment. No distinct change is found for the other sea/island domains before and


after the treatment. As shown in Figures 3a and 3b, dye absorption bands at around 350 and 680 nm completely disappear after the pentane treatment, again indicating that all the dye


molecules are selectively extracted into pentane solution. We therefore conclude that the majority of SiPc6 molecules are located at the RRa-P3HT/PS interface in RRa-P3HT/PS/SiPc6 ternary


blend films. As shown in Figures 4d and 4e, RRa-P3HT/PS/SiPcBz ternary blend films also exhibit a similar sea-island structure before and after the pentane treatment. In the cross-sectional


line profile, as shown in Figures 4g and 4h, the height of the sea domains is higher than that of the island domains before and after the treatment but slightly reduced from ~270 to ~250 nm


after the treatment while the height of the island domains remains the same before and after the treatment. In addition, several dips and a slight dip are observed in the sea domains and at


the sea/island interface, respectively, after the treatment. As shown in Figures 4a and 4b, dye absorption bands at around 350 and 680 nm decreases by 75% but still observed even after the


pentane treatment, indicating that 75% of dyes are extracted into pentane solution but 25% of dyes still remains in the blend film. After the cyclohexane treatment, as shown in Figures 4c


and 4i, the dye absorption bands completely disappear and no height change is observed for the RRa-P3HT domains. These findings indicate that the remaining dye molecules (25%) are removed


from the PS domains. We therefore conclude that 75% of SiPcBz molecules are located at the surface of the PS sea domains and the other 25% of SiPcBz are located inside the PS sea domains or


the interface in RRa-P3HT/PS/SiPcBz ternary blend films. DISCUSSION For quantitative discussion, we roughly estimate the dye fraction at each location in ternary blend films from the


difference in the AFM images and the absorption spectra before and after the pentane treatment. Details of the estimation are described in the Supplementary Information. In


RRa-P3HT/PS/BuSiPc6 ternary blend films, as summarized in Table 2, 87% of BuSiPc6 are located at RRa-P3HT domains and the rest of them are located at RRa-P3HT/PS interface. In


RRa-P3HT/PS/SiPc6 ternary blend films, 90% of SiPc6 are located at RRa-P3HT/PS interface and the rest of them are located at RRa-P3HT domains. In RRa-P3HT/PS/SiPcBz ternary blend films, 93%


of SiPcBz are located at PS domains and the rest of them are located at RRa-P3HT/PS interface. Although these are rough estimation, it can be safely said that the majority of dye molecules


are spontaneously located at RRa-P3HT domains in RRa-P3HT/PS/BuSiPc6, at RRa-P3HT/PS interface in RRa-P3HT/PS/SiPc6, at PS domains in RRa-P3HT/PS/SiPcBz ternary blend films. These dye


allocations can be predicted in terms of the surface energy of each material as discussed below. As reported previously, the interfacial energy is one of the key parameters for such


spontaneous segregation of the third material in ternary blend films15,33,34,35,36. Sumita et al. introduced a key parameter of the wetting coefficient (ω) evaluated from the surface energy


of each component material to predict allocation of fillers doped as the third material in polymer/polymer binary blends. Here, the surface energy of a matrix polymer A is lower than that of


the other matrix polymer B (γA < γB). The third material filler will be located at polymer A domains when ω > 1, at the A/B interface when −1 < ω < 1 and at polymer B domains


when ω < −1. On the basis of this simple model, we calculate the wetting coefficient of dye (ωdye) to predict the dye location in RRa-P3HT/PS/dye ternary blend films. As a result, dye


molecules are predicated to be located at RRa-P3HT domains (BuSiPc6, ωdye = 1.2), at the RRa-P3HT/PS interface (SiPc6, ωdye = 0.2) and at PS domains (SiPcBz, ωdye = −1.4). These locations


predicted are, as shown in Table 2, fully consistent with the dye location revealed by the AFM measurements. In conclusion, we demonstrated that dye molecules can be selectively loaded into


each domain or interface in polymer/polymer blend films by careful designing the surface energy of dye with appropriate axial ligands. We thus emphasize that our finding can provide a


molecular design perspective for selective loading of small molecules in blend films fabricated even by solution processes such as spin-coating. In particular, this strategy is useful for


developing new dye molecules employed in ternary blend polymer solar cells, in which interfacial dye loading is the key to success for efficient dye sensitization. METHODS DYE SYNTHESIS The


reaction schemes and the chemical structures of SiPc derivatives with various axial groups employed in this study are summarized in the Supporting Information. BuSiPc6: A mixture of silicon


2,9,16,23-tetra-_tert_-butyl-29_H_,31_H_-phthalocyanine dihydroxide (BuSiPc(OH)2) (115 mg), chlorotri-_n_-hexylsilane (250 μL) and dry pyridine (15 mL) was refluxed for 6 h. After the


solution obtained had been allowed to cool, the solvent was evaporated and chloroform was added to the residue. The solution was washed with saturated NaCl solution and then dried over


MgSO4. After evaporation of the solvent, the residue was purified by silica gel column chromatography (toluene/hexane = 1/1 (v/v) as eluent) to afford BuSiPc6 (76.8 mg) as a bluish-green


solid (yield = 38%). UV–visible (toluene): λmax 669 nm (ε = 2.6 × 105 M−1 cm−1); 1H NMR (400 MHz, CDC13):δ = 9.61–9.64 (m, α-Pc, 8H), 8.35–8.37 (m, β-Pc, 4H), 1.82–1.83 (m, tBu, 36H),


0.67–0.71 (m, ε-CH2, 12H), 0.47–0.51 (t, CH3, 18H), 0.35–0.42 (m, δ-CH2, 12H), 0.03–0.04 (m, γ-CH2, 12H), −1.23– −1.29 (m, β-CH2, 12H), −2.40– −2.45 (m, α-CH2, 12H). MALDI-TOF: _m/z_ 1363.9


(M + H). Calcd for C84H126N8O2Si3: _m/z_ 1364.2. SiPc6: A mixture of silicon phthalocyanine dihydroxide (SiPc(OH)2) (85 mg), chlorotrihexylsilane (200 μL) and dry pyridine (10 mL) was


refluxed for 6 h. After the solution obtained had been allowed to cool, the solvent was evaporated and chloroform was added to the residue. The solution was washed with saturated NaCl


solution and then dried over MgSO4. After evaporation of the solvent, the residue was purified by silica gel column chromatography (toluene/hexane = 1/1 (v/v) as eluent) to afford SiPc6 (106


 mg) as a blue solid (yield = 62.8%). UV–visible (toluene): λmax 668 nm (ε = 3.0 × 105 M−1 cm−1); 1H NMR (400 MHz, CDC13):δ = 9.63 (m, 3,6-Pc, 8H), 8.31 (m, 4,5-Pc, 8H), 0.81 (m, ε-CH2,


12H), 0.71 (t, CH3, 18H), 0.36 (m, δ-CH2, 12H), 0.02 (m, γ-CH2, 12H), −1.28 (m, β-CH2, 12H), −2.45 (m, α-CH2, 12H). MALDI-TOF: _m/z_ 1139.7 (M + H). Calcd for C68H94N8O2Si3: _m/z_ 1139.8.


SiPcBz: A mixture of silicon phthalocyanine dihydroxide (SiPc(OH)2) (99 mg), chlorotribenzylsilane (270 mg) and dry pyridine (15 mL) was refluxed for 5 h. After the solution obtained had


been allowed to cool, the solvent was evaporated and chloroform was added to the residue. The solution was washed with saturated NaCl solution and then dried over MgSO4. After evaporation of


the solvent, the residue was purified by silica gel column chromatography (dichloromethane/acetone = 30/1 (v/v) as eluent) to afford SiPcBz (126 mg) as a bluish-green solid (yield = 62%).


UV−visible (toluene): λmax 675 nm (ε = 3.0 × 105 M−1 cm−1); 1H NMR (400 MHz, CDC13):δ = 9.58–9.63 (m, 3,6-Pc, 8H), 8.21–8.37 (m, 4,5-Pc, 8H), 6.45–6.53 (m, 4-Ph, 6H), 6.28–6.39 (m, 3,5-Ph,


12H), 4.81–4.98 (m, 2,6-Ph, 12H), −0.96 (m, CH2, 12H). MALDI-TOF: _m/z_ 1175.4 (M + H). Calcd for C74H58N8O2Si3: _m/z_ 1175.6. SAMPLE FABRICATIONS The quartz glass or glass substrates were


cleaned by ultrasonication in toluene, acetone and ethanol each for 15 min, dried with N2 and cleaned with a UV–O3 cleaner for 30 min. For contact angle measurements, neat films (~100 nm) of


RRa-P3HT (Aldrich, head-to-head:head-to-tail = 1:1, _M_w = 90600), PS (Scientific Polymer Products, _M_w = 22000) and SiPc dyes were individually spin-coated on the cleaned quartz glass.


For the dye-concentration dependence measurement, RRa-P3HT and PS films doped with dyes at various concentrations were prepared by spin-coating on the glass substrate from a chlorobenzene


solution to give blend films with a thickness of about 80 nm. For the AFM measurements, RRa-P3HT/PS/dye ternary blend films were spin-coated from a chlorobenzene solution at a weight ratio


of 2:2:1 (10:10:5 mg mL−1). MEASUREMENTS For materials characterization, 1H NMR spectra were recorded on a JEOL EX-400 spectrometer at 400 MHz by using CDCl3 as solvent and MALDI-TOF mass


spectra were obtained on a Bruker Ultraflex MALDI/TOF mass spectrometer with dithranol as matrix. To evaluate the surface energy of each material, contact angle θX was measured on the neat


film of material X using ultrapure water at room temperature. The surface energy γX can be evaluated from θX by the Neumann's equation combined with the Young's equation15,29. From


the surface energy γX of each material, the interface energy γAB between A and B materials was evaluated by the Neumann's equation15,29. The wetting coefficient ωC of material C in a


matrix blend of A and B can be evaluated from the interface energy: ωC = (γBC − γAC)/γAB29,33. Therefore, the dye molecule location can be predicted from the wetting coefficient ωC in a


blend film. Absorption spectra of the blend films were measured with a spectrophotometer (Hitachi, UV-3500). Film morphology and thickness of blend films were measured with AFM (Shimadzu,


SPM-9600) in the contact mode. The AFM images were observed for as-cast films, SiPc dye-removed films and PS-removed films. The SiPc dye-removed films were obtained by immersing the as-cast


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references ACKNOWLEDGEMENTS This work was partly supported by the FIRST program (Development of Organic Photovoltaics toward a Low-Carbon Society: Pioneering Next Generation Solar Cell


Technologies and Industries via Multi-manufacturer Cooperation) and the JST PRESTO program (Photoenergy Conversion Systems and Materials for the Next Generation Solar Cells). AUTHOR


INFORMATION AUTHORS AND AFFILIATIONS * Department of Polymer Chemistry, Graduate School of Engineering, Kyoto University, 615-8510, Katsura, Nishikyo, Kyoto, Japan Huajun Xu, Takaaki Wada, 


Hideo Ohkita, Hiroaki Benten & Shinzaburo Ito * Japan Science and Technology Agency (JST), PRESTO, 4-1-8 Honcho Kawaguchi, 332-0012, Saitama, Japan Hideo Ohkita Authors * Huajun Xu View


author publications You can also search for this author inPubMed Google Scholar * Takaaki Wada View author publications You can also search for this author inPubMed Google Scholar * Hideo


Ohkita View author publications You can also search for this author inPubMed Google Scholar * Hiroaki Benten View author publications You can also search for this author inPubMed Google


Scholar * Shinzaburo Ito View author publications You can also search for this author inPubMed Google Scholar CONTRIBUTIONS H.O. and S.I. conceptualized and directed the research project.


H.X. and T.W. synthesized the SiPc dyes and performed measurements. H.X. wrote the original manuscript with the assistance of H.O. All authors discussed the results and commented on the


manuscript. ETHICS DECLARATIONS COMPETING INTERESTS The authors declare no competing financial interests. ELECTRONIC SUPPLEMENTARY MATERIAL SUPPLEMENTARY INFORMATION SupplementaryInformation


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ARTICLE CITE THIS ARTICLE Xu, H., Wada, T., Ohkita, H. _et al._ Molecular Design of Near-IR Dyes with Different Surface Energy for Selective Loading to the Heterojunction in Blend Films.


_Sci Rep_ 5, 9321 (2015). https://doi.org/10.1038/srep09321 Download citation * Received: 28 October 2014 * Accepted: 02 March 2015 * Published: 20 March 2015 * DOI:


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